Kirsten Emilie Moselund received the M.Sc. degree in engineering from the Technical University of Denmark, Lyngby, Denmark, in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008 for her work on top-down silicon nanowire electronic devices. In 2008, she joined the IBM Zurich Research Laboratory, Zurich, Switzerland, where she is currently a Research Staff Member. Her present work at IBM focuses on bottom-up nanowire tunnel FETs, in particular based on the integration of III-V heterostructures on silicon. Throughout her career she has worked with the design, fabrication and characterization of silicon and III-V semiconductor devices, both for photonic and electronic applications. Her research interests include semiconductor physics, advanced transistor concepts, and nanoelectronic fabrication technology.