Home > Invited Speakers
Prof. Hiroshi Amano (Nagoya Univeristy, Japan)
Title: In and impurity incorporation in InGaN
Prof. Ishwara Bhat
(Renneslaer Polytechnic University, USA)
Title:
Recent Advances on the Epitaxial growth of CdTe and ZnTe on Si Substrates by MOVPE
Dr. Oliei Briot (Laboratoire Charles Coulomb, France)
Title: MOVPE of mismatched and strained semiconductor systems : from II-VI to nitrides
James Coleman
(University of Illinios, USA)
Title:
Patterned Nanostructure Lasers by Metalorganic Chemical Vapor Deposition
Dr. Frank Dimroth
(Fraunhofer ISE, Germany)
Title:
Next generation multi-junction solar cells for concentrator photovoltaic applications
Prof. Takashi Fukui
(Hokkaido University, Japan)
Title:
Compound Semiconductor Nanowire Solar Cells
Prof. Mitsuru Funato (Kyoto University, Japan)
Title: High quality AlGaN-based quantum wells for deep-ultraviolet emitters
Prof. Jung Han (Yale Univeristy, USA)
Title: Selective Area Growth of GaN: Prospects and New Twists
Prof. Sang-Woo Kim (Sungkyunkwan University, Korea)
Title: ZnO/Graphene Heterostructures for Piezoelectric Nanogenerator and OPV Applications
Prof. Hao-Chung Kuo (National Chiao Tung University, Taiwan)
Title: Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions
Prof. Luke Mawst
(University of Wisconsin - Madison, USA)
Title:
Deep Well Quantum Cascade Lasers
Dr. Kirsten Moselund
(IBM Research Zurich, Switzerland)
Title:
III-V Nanowire Heterostructures on Silicon for Tunneling Devices
Prof. Seong-Ju Park (GIST, Korea)
Title: Prospects for high performance GaN LED
Prof. Wolfgang Stolz (Universitaet Marburg, Germany)
Title: MOVPE of Monolithically Integrated, Lattice-matched Ga(NAsP)-laser Material on (001) Si Substrate